国家/地区 美国（5）
IPC部 B（5） C（5） H（4）
A（2）
IPC大类 B01（5） C01（5） C23（4）
H01（4） B82（3） A61（2）
IPC小类 B01J（5）
IPC B01J021/04（5）
发明人 LEE S J（2） SON I H（2）
公开年 2016（2）
申请年 2016（2） 
专利权人 SAMSUNG ELEC.（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Preparation of graphene-encapsulated metal nanoparticles used in e.g. LED, involves supplying preset mole ratio of gas comprising carbon dioxide, methane and water on metal catalyst and reacting and cooling resultant product.

SON I H, LEE S J

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J