国家/地区 韩国（4） 美国（4） 日本（3） 中国（2） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（4） C（4） H（2）
IPC大类 B01（4） C01（4） B82（2）
H01（2）
IPC小类 B01J（4）
IPC B01J023/755（4）
发明人
公开年 2014（4）
申请年 2014（4）
专利权人

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Preparation of porous graphene involves processing biomass-based carbon source with catalyst, obtaining intermediate product and heat-preserving intermediate at predetermined conditions.

ZHU J, LIU Z, ZHOU G, LIU D, LIU X, TANG Y, WANG E, ZHANG J, ZHENG Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y