国家/地区 美国（13） 韩国（11） 世界知识产权组织（10） 日本（9） 中国（8） 欧洲专利局（EPO）（6） 巴西（2） 香港（2） 印度（2） 墨西哥（2） 俄罗斯（2） 新加坡（2）
IPC部 B（17）
IPC大类 B82（17）
IPC小类 B82B（17） C01B（17） B82Y（10）
H01L（7） B32B（6） H01B（4）
C08K（3） B05D（2） C07C（2）
C07D（2） C23C（2）
IPC B82B001/00（17）
发明人 CHOE P Y（2） CHOI B（2） CHOI B L（2）
HWANG T M（2） I E K（2） KIM B（2）
KIM B S（2） KIM P S（2） LEE E（2）
LEE E K（2） WHANG D（2） WHANG D M（2）
公开年 2011（17）
申请年 2010（8）  2011（6）  2009（3） 
专利权人 SAMSUNG ELEC.（4） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Composition, useful in e.g. high speed transistors, electronic devices, sensors, solar cells, optoelectronic devices, logic devices, ultra capacitors, and actuators, comprises unaffixed graphene particulates.

BERRY V, MOHANTY N, MOORE D S

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Graphene nano sheet forming method, involves preparing graphite oxide from graphite material, mixing predetermined carbon additive material with graphite material, and mixing graphite oxide and carbon material additive in microwave oven.

KWANG B K, SANG H P, SEONG M B, JONG P J, KWANG H K

Producing two-dimensional nano-materials, useful in sensors, comprises adding sol precursor compound to mixture of graphene oxide particles or graphene particles and surfactant, reacting mixture in sol-gel process, and optionally heating.

IVANOVICI S, YANG S, FENG X, MUELLEN K, BIN Y S, KLAUS M

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S

Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M

Composite structure for manufacturing a logic device, a memory device, a supercapacitor and a flexible and stretchable device, comprises graphene sheets disposed at a regular interval, and a nanostructure oriented through the sheets.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, WHANG D M, KIM B S, LEE E K