国家/地区 美国（8） 中国（7） 欧洲专利局（EPO）（4） 日本（4） 世界知识产权组织（4） 韩国（3） 西班牙（2）
IPC部 B（9）
IPC大类 B82（9） C01（8） H01（8）
C23（3） B05（2） B32（2）
IPC小类 B82Y（9） C01B（8） H01L（7）
C23C（3） H01B（3） B05D（2）
B32B（2） B82B（2）
IPC B82Y010/00（9）
发明人
公开年 2012（9）
申请年 2012（6）  2011（2） 
专利权人 SAMSUNG ELEC.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Preparation of graphene nanobelt for microelectronic devices, involves injecting silicon ions into silicon carbide, pyrolyzing to form carbon film, depositing nickel film on substrate, placing carbon film on nickel film, and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K

Method for preparing graphene film or graphene material, involves preparation aqueous solution of water soluble biopolymer to form non-crystallizing hydrogels or derivative of biopolymer.

DELGADO SANCHEZ J M, SANCHEZCORTEZON E, ATIENZAR CORVILLO P, PRIMO ARNAU A M, GARCIA GOMEZ H, DELGADO S J M, SANCHEZ C E, ATIENZAR C P, PRIMO A A M, GARCIA G H, SANCHEZ CORTEZON E, SANCHEZ J M D, CORTEZON E S, CORVILLO P A, ARNAU A M P, GOMEZ H G

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S