国家/地区 中国（4）
IPC部 B（4）
IPC大类 B82（4） C01（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 LEI T（4）
公开年 2012（4）
申请年 2012（4）
专利权人 UNIV XIDIAN（4）

Nickel membrane annealed graphene nanobelt preparation for making microelectronic apparatus includes injecting silicon ions in appointed zone on grown silicon carbide, pyrolyzing, and electronic beam depositing nickel membrane on substrate.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Method for preparing graphene nano belt for manufacturing micro-electronic apparatus, involves carbonizing silicon substrate, growing carbide layer, obtaining silicon carbide film sample, generating carbon membrane and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Preparing graphene, comprises e.g. washing silicon carbide sample wafer, soaking the sample wafer in ammonium hydroxide and hydrogen peroxide solvent, and placing the washed sample wafer in a quartz tube and then heating.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y