国家/地区 韩国（40）
IPC部 B（40）
IPC大类 B82（40） C01（40） H01（26）
C23（17） B32（15） B05（11）
B01（9） C08（7） C09（7）
C30（6） B44（5） C07（4）
C03（3） C25（3） D01（3）
IPC小类 B82Y（40）
IPC B82Y040/00（40）
发明人 CHOI J（5） CHOI J Y（5） HONG B H（5）
SHIN H（5） SHIN H J（5） AHN J（4）
BAE S K（4） KIM H K（4） BAE S（3）
CHOI W（3） CHOI W M（3） CHUNG H（3）
CHUNG H J（3） GANG B S（3） GEUN K H（3）
公开年 2011（40）
申请年 2011（18）  2010（17）  2009（5） 
专利权人 SAMSUNG ELEC.（9） UNIV SUNGKYU.（8） GRAPHENE SQU.（3） GUARDIAN GLA.（3）
GUARDIAN IND（3） GUARDIAN IND.（3） UNIV SUNGKYU.（3） AHN J（2）
BAE S（2） BAYER TECHNO.（2） HONG B H（2） KIM H K（2）
KOREA INST S.（2） SAMSUNG TECH.（2） UNIV SINGAPO.（2） UNIV SINGAPO.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Manufacture of graphene involves using face centered cubic metal catalyst with single oriented texture.

CHA S W, HONG B H, HONG S Y, JUNG M H, KIM K E, KIM K H, MAENG K S, PARK C W, PARK S B

Manufacturing method of graphene transfer film involves applying air pressure to at least one of graphene growth film and carrier film so that graphene and carrier film are attached to each other.

CHO S, SONG Y, CHO S H, SONG Y I

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Manufacture of reduced graphene oxide for manufacturing reduced graphene-polymer composite, involves treating graphite with strong acid, mixing with halogen-substituted aromatic compound and stirring.

KU B C, PARK O K, LEE S H, NA S I, JO H I, KIM J K, LEE J H, KU B, PARK O

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K