国家/地区 韩国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/00（7）
发明人 TOUR J（2） TOUR J M（2）
公开年 2011（3）
申请年 2010（2）  2012（2） 
专利权人 UNIV RICE WI.（2） UNIV RICE WI.（2）

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Preparation of functionalized graphene nanoribbons used for e.g. deicing circuit, involves exposing carbon nanotubes to alkali metal source in presence of aprotic solvent and exposing opened carbon nanotubes to electrophile.

TOUR J M, LU W, GENORIO B, TOUR J, TOUR YA M, LU V

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Method for manufacturing graphene that is utilized in e.g. semiconductor, involves mixing organic compound and graphite with reaction medium containing poly phosphate and phosphorus pentoxide.

CHOI E K, JEON I Y, BAE S Y, BAEK J B

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S

Producing graphene oxide involves mixing graphite source with solution containing oxidant and protecting agent, and oxidizing the graphite source with the oxidant in presence of the protecting agent to form graphene oxide.

TOUR J M, KOSYNKIN D V, TOUR J, KOSYNKIN D