国家/地区 韩国（4） 美国（3） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2）
IPC部 B（4）
IPC大类 B44（4）
IPC小类 B44C（4）
IPC C01B031/02（4）
发明人
公开年 2013（2） 2014（2）
申请年 2013（4）
专利权人

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Transferring graphene films from substrate to another substrate, during manufacturing of e.g. touch display, involve forming material layer on part of surface of first substrate, and attaching second substrate to second surface of layer.

WILLNER B I, WILLNER B

Manufacturing laminated structure used in e.g. display, comprises bonding layer of graphene film on first substrate to second substrate with adhesive resin layer, removing first substrate and forming transparent layer on graphene film.

KIMURA N, SHIMIZU K, FUKUDA T

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S