国家/地区 中国（3）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 GUO H（4）
公开年 2012（3）
申请年 2012（3） 
专利权人 UNIV XIDIAN（3）

Manufacture of graphene for transparent electrode of transistor, involves supplying liquid metal in carbon source, contacting graphene seed on surface of liquid metal and growing graphene seed on surface of liquid metal.

WOO Y S, CHOI J Y, ZHIN Z, GUO H, CHOI W M

Manufacture of nickel film-containing graphene nano ribbon involves forming carbon-silicon carbide epitaxial film on carbonized layer formed on silicon substrate, depositing nickel film, annealing and removing nickel film.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon used in manufacture of microelectronic device, involves preparing masking plate by isolation strip and ion-implantation strip, and controlling width of strips, and injecting carbon ions to substrate.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y

Preparation of graphene nanoribbon by growing carbide layer on silicon substrate chip, growing cubic silicon carbide heteroepitaxial film, injecting carbon ions, pyrolyzing to generate carbon film, placing on copper film, and annealing.

GUO H, TANG X, ZHANG Y, ZHANG K, ZHAO Y