国家/地区 美国（5） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 日本（4） 韩国（4） 中国（3） 印度（3） 墨西哥（3） 俄罗斯（3） 台湾（3）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C01B（6）
IPC C01B031/02（6）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（6）
申请年 2009（3）  2010（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Graphene substrate used in graphene electronic device, has base substrate which is insulating monocrystal substrate provided with monoatomic step structure on surface.

OGINO TOSHIO, TSUKAMOTO TAKAHIRO, KOYAMA KOUJI, SUNAGAWA KAZUHIKO

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V