国家/地区 韩国（4） 美国（4）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B01J（5）
IPC C01B031/04（5）
发明人 KIM S（5）
公开年 2017（3）
申请年 2016（2） 
专利权人

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Multilayered graphene-coated metal nanoparticles used as optical igniter for highly energetic nanomaterial, comprise graphene which absorbs light energy and generates heat by vibrating surrounding air molecules, on metal catalyst particles.

KIM J, KIM S

Metal-carbon composite used for e.g. molecular detectors, comprises porous scaffold comprising carbon nanotube(s), graphene and graphene oxide, and metal nanoparticles arranged on scaffold in preset ratio, and has preset density.

WORSLEY M A, SATCHER J, KUCHEYEV S, CHARNVANICHBORIKARN S, COLVIN J, FELTER T, KIM S, MERRILL M, ORME C

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W