国家/地区 美国（5） 欧洲专利局（EPO）（4） 韩国（4） 世界知识产权组织（4） 中国（3） 日本（3）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B032/184（5）
发明人 AHMED M（2） IACOPI F（2）
公开年
申请年
专利权人 UNIV GRIFFIT.（2） UNIV SYDNEY .（2）

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T