国家/地区 日本（72）
IPC部 C（72）
IPC大类 C01（72）
IPC小类 C01B（72） H01L（31） B82Y（29）
H01M（29） H01G（17） B01J（14）
H01B（14） B32B（10） C09D（10）
C23C（10） B05D（7） C07C（7）
C08K（6） C08G（5） C30B（5）
IPC C01B032/184（72）
发明人 JANG B Z（5） YAMAGUCHI J（5） ZHAMU A（5）
LEE J（3） SOHN K（3） TANG J（3）
TATENO Y（3） ABDELKADER A M（2） DO S（2）
DO S H（2） DO SEUNG H（2） DRYFE R A W（2）
JEFF R A W（2） JEON S（2） JEON S Y（2）
公开年 2015（16） 2021（14） 2016（8） 2013（7） 2017（6） 2018（5） 2012（3） 2014（3） 2019（2） 2020（2） 2022（2） 2023（2）
申请年 2015（10）  2013（9）  2014（9）  2020（8）  2016（7）  2019（6）  2012（5）  2011（4）  2017（4）  2021（4）  2022（3）  2018（2） 
专利权人 FUJITSU LTD（7） NANOTEK INST.（5） JANG B Z（3） SEMICONDUCTO.（3）
SUMITOMO ELE.（3） ZHAMU A（3） HANWHA CHEM .（2） LG CHEM CO L.（2）
LG CHEM LTD（2） NAT INST MAT.（2） NOKIA TECHNO.（2） UNIV MANCHES.（2）
UNIV RICE WI.（2） UNIV RICE WI.（2） YAZAKI CORP（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Producing graphene material used in graphene electrode for electric double layer capacitor, by preparing graphene oxide, heat-treating graphene oxide, dispersing heat-treated graphene oxide in dispersion medium, and hydrothermally treating thermally reduced graphene oxide dispersion.

JIE T, SHIQI L, KUN Z, YUKINORI H, YORISHIGE M, TANG J, LIN S Q, ZHANG K, HATO Y, MATSUBA Y

Weakly coupled enhanced graphene film for use in graphene photoelectric device, comprises an enhanced graphene structure based on weak coupling, where the enhanced graphene structure based on weak coupling comprises many graphene units stacked vertically; the graphene unit is a single graphene sheet.

LIU Y, FANG W, LI L, PENG L, GAO C, GOO C, FENG L, WEE D

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y

Carbon-coated composite material useful for negative electrode for lithium ion secondary battery, is obtained by coating surface of composite material containing carbon material and silicon with carbonaceous coating layer, where material has preset coefficient of variation in Raman spectrum.

BAI Z X, FUJITA M, FUKUI T, ITO Y

Graphene nanoribbon used for semiconductor device, comprises semiconductor graphene nanoribbon having width and metallic graphene nanoribbon bonded to one end of semiconductor graphene nanoribbon in length direction and having width larger than width of semiconductor graphene nanoribbon.

YAMAGUCHI J

Manufacture of microfibrous cellulose nanocarbon containing material used in e.g. electrochemical device, involves performing miniaturization process on liquid mixture comprising cellulose fiber, and solvent, and suppressing bubbling.

YUICHI N, YUSAKU I, MASATO S, NOGUCHI Y, SAITO M, IMAMURA Y

Manufacture of electrically connected components involves forming contact portion comprising layer(s) of graphene on surface of metallic component by irradiating graphene-forming light having wavelength in wavelength region.

KAWAI Y

Carbon film comprises first layer containing flat graphene, and second layer formed on the first layer containing arc-shaped graphene.

OOTA R, NAKANISHI K, OZAWA Y

Reduced porous graphene oxide used for sulfur-carbon composite for forming anode for lithium secondary battery e.g. lithium-sulfur battery, comprises pores with preset size.

YANG S, SOHN K, SUN Q