国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B032/186（7）
发明人 TAN H（7）
公开年 2016（4） 2017（3）
申请年 2016（7）
专利权人 WUXI GRAPHEN.（7） WUXI SIXTH E.（2）

Laser donor film used for transferring graphene thin film comprises base film, laser heat transfer layer and adhesive layer, where base film is used as carrier film for laser heat transfer layer, and adhesive layer.

YANG J, TAN H

Growth substrate for preparing three-dimensional graphene film, comprises metal foil, and metal mesh which are alternately stacked together.

WANG W, TAN H

Cooling wall furnace useful for preparing graphene by chemical vapor deposition method, comprises sequentially connected injection chamber, process chamber and sample chamber.

SHEN D, LIU H, TAN H

Preparation of ultrathin ultra-flexible graphene electroconductive thin film involves cutting target substrate and back film composite, pre-shrinking, forming film/graphene/substrate/back film, removing adhesive film and back film.

YANG J, TAN H, JI H

Transferring graphene prepared by chemical vapor deposition process involves processing target substrate, coating layer of polymer solution on target substrate, drying and removing solvent to obtain final product.

QIN X, YANG J, TAN H

Transferring graphene thin film involves growing graphene film on the metal substrate by chemical vapor deposition method, bonding obtained film with target substrate, placing composite film in wet oxygen environment and separating graphene.

LIU H, WANG W, YANG J, TAN H

Etching method for direct formation of multilayer graphene film by chemical vapor deposition method of graphene, involves etching growth substrate, removing graphene layer, calcining graphene film and removing surface protective glue.

WANG W, TAN H, QIN X