国家/地区 中国（4）
IPC部 B（4）
IPC大类 C01（4） B82（2）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 LI C（4）
公开年 2022（2）
申请年
专利权人

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Preparing nitrogen-doped graphene by three-dimensional printing recyclable metal salts comprises designing double helix structure template by computer software, carrying out reduction reaction, removing metal template with dilute acid, and collecting metal salt powder for subsequent recycling.

GUAN C, LI C, DU J, FU G, XU Q

Preparing graphene film by using vegetable oil involves placing growth substrate and growth precursor of graphene in quartz tube, placing quartz tube in heating zone of chemical vapor deposition furnace, sealing quartz tube and heating.

WANG L, WU P, YU X, WANG W, FENG L, LI C

Preparing spherical shell-shaped three-dimensional graphene comprises e.g. uniformly mixing copper(ii) sulfate and nickel(ii) sulfate, washing, heating under vacuum, carrying out reduction treatment and graphene deposition process.

GUO X, JIANG J, ZENG Y, ZHANG X, HE M, CHEN J, GE C, LI C