国家/地区 中国（5） 欧洲专利局（EPO）（2） 日本（2） 韩国（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5） C23（2） H01（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 LI C（5）
公开年 2020（5）
申请年 2020（3） 
专利权人 SAMSUNG ELEC.（2） UNIV TIANJIN.（2）

Preparing graphene film, by transforming coal into semi-coke and high-temperature volatile products, separating volatile products and passing vapor phase light component to chemical vapor deposition method graphene growth reaction system.

LI C, LUO Z, FANG M, CEN J

Growing vertical graphene film comprises preparing substrate and depositing graphene film on substrate by hot filament chemical vapor deposition (CVD) method.

LI M, YANG Z, LI H, LI C, YANG B

Preparation of graphene microtube used for three-electrode system by using ethanol as carbon source, nitrogen or inert gas as auxiliary gas, and tantalum wires arranged in parallel and positioned on same plane as deposition substrate.

LI M, ZHANG F, LI H, LI C, YANG B

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C