国家/地区 美国（5） 日本（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 韩国（3） 中国（2）
IPC部 C（6） H（6） B（4）
IPC大类 C01（6） H01（6） B32（2）
B82（2） C23（2）
IPC小类 C01B（6）
IPC C01B032/194（6）
发明人
公开年 2015（6）
申请年 2013（6）
专利权人

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Manufacture of graphene sheet organic dispersion used for e.g. heat dissipation graphene sheet structure involves preparing graphene oxide water dispersion containing water-soluble compound and graphene oxide and reduction-processing.

SAKAMOTO H, KAWASAKI S, ZAIMA H, YAMADA M

Transferring a graphene layer from a metal substrate to a second substrate by providing a graphene layer on the metal substrate, adsorbing hydrogen atoms on the metal substrate, and treating the metal substrate.

HUYGHEBAERT C, VEREECKEN P M, POURTOIS G

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J