国家/地区 韩国（5）
IPC部 C（5） H（4）
IPC大类 C01（5） H01（4）
IPC小类 C01B（5）
IPC C01G039/06（5）
发明人
公开年 2021（5）
申请年 2020（3）  2021（2） 
专利权人

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Film used for sensor, comprises substrate comprising at least one chosen from graphene, reduced graphene oxide, and hexagonal boron nitride and transition metal dichalcogenide layer comprising rhenium oxysulfide.

SUNG P H, SEO J H

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Carbon composite useful in anode of sodium secondary battery comprises multiple carbon allotrope layers having layered structure, and pillar structure provided between multiple carbon allotrope layers.

HEE R W, KIMSUJI, KIM Y

Nanocomposite useful in anode for lithium ion battery comprises core-shell nanoparticles provided on reduced graphene oxide.

JOO S, REN H, HUANG J