国家/地区 中国（5）
IPC部 C（5）
IPC大类 C22（5）
IPC小类 C22F（5）
IPC C22F001/08（5）
发明人 CHIBA G（3） CHIBA Y（3） YOSHIHIRO C（2）
公开年 2012（2）
申请年 2012（3） 
专利权人 JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3）

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Method for reducing resistivity of single crystal copper wire, involves annealing single crystal copper under non-oxidizing gas and protective gas atmosphere, introducing carbon-containing gas into copper wire, reacting and cooling.

NOVOSELOV K

Copper foil used for manufacturing graphene, comprises copper with specific purity.

CHIBA Y, ONO T, CHIBA G

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G