国家/地区 中国（3） 美国（2）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C014/06（5）
发明人
公开年 2012（2） 2013（2）
申请年 2012（5）
专利权人

Forming three dimensional structures based on graphene having sp1-linear carbon chain, by condensing carbon on graphene or its surface by evaporating graphite in vacuum, and forming hexagonal close-packed structure of chain with graphene.

GLUKHOV D E

Making strip shaped graphene layer used in semiconductor devices e.g. sensor, involves providing carbon nanotube structure comprising film on substrate surface, implanting carbon ions into substrate, and annealing substrate to obtain layer.

LIN X, JIANG K, FAN S

Manufacture of graphene structure used in electronic device, involves providing catalyst metal layer on insulation film layer, supplying carbon in plasma state under specified conditions, and forming graphene layer.

EGAWA T, FUJITA K

Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.

KE P, WANG A, ZHANG X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y