国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） H01（5）
IPC小类 C23C（5）
IPC C23C014/08（5）
发明人 CHEN Y（2）
公开年 2021（4）
申请年 2021（5）
专利权人

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Double-layer coating modified lithium ion battery anode material powder comprises anode material substrate, first coating layer covered on surface of anode material substrate and second coating layer covered on surface of first layer coating layer.

FEI Z, CHEN Y

Method for preparing manganese-doped zinc oxide dilute magnetic semiconductor thin film, involves controlling direct current (DC) magnetron sputtering device, coating substrate, and cooling to room temperature to obtain manganese-doped zinc oxide diluted magnetic semiconductor film.

LIU F, WU P, HONG B, ZHAO W

Ultra-sensitive flexible gallium oxide photoelectric detector used in optical imaging or optical track detection has metal aluminum film provided with first metal aluminum film, second metal aluminum film, and eighth metal aluminum film.

YANG X, CHEN Y, SHAN C