国家/地区 中国（4）
IPC部 C（4） H（2）
IPC大类 C23（4）
IPC小类 C23C（4） C30B（4） H01L（2）
IPC C23C014/35（4）
发明人 WANG H（2）
公开年 2022（4）
申请年 2022（3） 
专利权人

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K