国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） B82（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人
公开年 2017（5）
申请年 2016（3）  2017（2） 
专利权人

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H

Method for fabricating composite film structure for strain sensor system for measuring mechanical movements in biological sample, involves removing metal substrate from graphene and deposited metallic layer to form composite film structure.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P