国家/地区 美国（7）
IPC部 B（7）
IPC大类 C01（7） C23（7） B82（4）
B01（3） H01（2）
IPC小类 C01B（7）
IPC C23C016/26（7）
发明人
公开年 2018（7）
申请年 2017（5）  2018（2） 
专利权人

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P