国家/地区 美国（28）
IPC部 B（28）
IPC大类 C01（28） C23（28） B82（26）
H01（17） B32（16） B01（7）
B05（4） C03（3） C30（3）
B29（2） B44（2） C25（2）
H05（2）
IPC小类 C01B（28）
IPC C23C016/26（28）
发明人 FAN F Y（5） FAN S（5） JIANG K（5）
LIN X（5） XIAO L（5） HONG B H（4）
LIN X Y（4） CHOI J（3） HONG B（3）
KIM H（3） AHN J（2） AHN J H（2）
CHOE P（2） CHOI B（2） CHOI B L（2）
公开年 2012（28）
申请年 2011（16）  2012（12） 
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） UNIV TSINGHU.（5） HANWHA TECHW.（4）
SAMSUNG ELEC.（4） SAMSUNG TECH.（4） UNIV SUNGKYU.（3） CHINESE ACAD.（2）
GRAPHENE SQU.（2） HANWHA AEROS.（2） KOREA ADV IN.（2） SHANGHAI INS.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A