国家/地区 美国（18） 韩国（16） 中国（12） 世界知识产权组织（11） 日本（9） 台湾（5） 欧洲专利局（EPO）（3）
IPC部 C（28） B（19） H（17）
IPC大类 C01（28） C23（28） B82（16）
H01（16） B32（11） B01（4）
B05（3） C03（3） C25（2）
IPC小类 C01B（28）
IPC C23C016/26（28）
发明人 FAN F Y（5） FAN S（5） JIANG K（5）
LIN X（5） XIAO L（5） LIN X Y（4）
HONG B H（3） LEE K（3） AHN J（2）
AHN J H（2） BAE S（2） BAE S K（2）
CHOI I（2） CHOI I S（2） HONG B（2）
公开年 2012（28）
申请年 2011（28）
专利权人 HON HAI PREC.（5） HONGFUJIN PR.（5） UNIV TSINGHU.（5） HANWHA TECHW.（3）
KOREA ADV IN.（3） SAMSUNG TECH.（3） POSTECH ACAD.（2） SAMSUNG ELEC.（2）
UNIV SUNGKYU.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Method of growing graphene involves injecting carbon on inorganic substrate, forming graphite catalyst layer on carbon-injected inorganic substrate, forming multilayer board on substrate and growing graphene on multilayer board.

YOON S M, CHOI J Y, WOO Y S, SHIN H J, LEE S K

Manufacture of graphene sheet involves interconnecting warped surfaces of catalyst substrate, growing graphene on one surface of warped surfaces, and separating bonded substrates.

JIN J, JEON S, LEE Y, HONG Y

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Synthesis of graphene involves preparing dielectric substrate, mounting electric furnace on substrate, increasing reaction temperature, and injecting carbon precursor on substrate.

SON M H, SONG H J, CHOI H C