国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/26（4）
发明人 LIU B（4）
公开年 2021（4）
申请年 2020（3） 
专利权人 BEIJING GRAP.（2）

Chemical vapor deposition device for preparing graphene film, has vacuum monitoring unit for controlling and detecting vacuum degree of reaction unit, and carbon source feeding unit comprising atomizer and vaporizer.

GAO X, SHAN J, LIU B, ZHENG K, GU W

Chemical vapor deposition device for realizing continuous growth of graphene film on surface of graphene glass, comprises reaction unit for generating thin film on substrate by chemical vapor deposition reaction, and bearing panel.

GAO X, ZHENG K, LIU B, GU W

Preparing graphene copper-based composite powder comprises e.g. filling protective gas and carbon source gas into reaction chamber, vaporizing copper powder in reaction chamber to copper steam, and performing gradient temperature control.

HOU H, LI T, LIU B, SHEN Y

Controllable growing of two-dimensional semiconductor film by dissolving excess metal precursor in supercritical carbon dioxide to reach saturation state, introducing supercritical carbon dioxide into nuclear reaction area, and growing film.

XU Q, WANG Q, YIN J, LIU B, WANG Z