国家/地区 美国（6）
IPC部 B（6）
IPC大类 C23（6） B82（5） C01（4）
H01（4） B32（3） B05（2）
IPC小类 C23C（6） B82Y（5） C01B（4）
B32B（3） H01L（3） B05D（2）
B82B（2） H01B（2）
IPC C23C016/26（6）
发明人
公开年 2011（6）
申请年 2010（6）
专利权人

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Three-dimensional nanostructure used for field-emitting device, is obtained by laminating graphene film and nano-material chosen from nanowires, nanotubes, nanorods, nanoneedles and nanoparticles.

KIM S O, LEE W J, LEE D H, HAN T H, KIM J E, LEE J A, LEE K J

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K

Making graphene used for coating graphene-coatable materials by providing starting material comprising carbonaceous material sulfur and excluding transition metal and heating starting material.

CHENG I F, MCILROY D N, FOUTCH J, GRIFFITHS P R

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S