国家/地区 美国（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） H01L（5） C01B（3）
H01J（2）
IPC C23C016/27（6）
发明人
公开年 2021（4）
申请年 2020（2）  2021（2） 
专利权人

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X

Transistor pathogen virus detector for detection of SARS-COV2 virus, comprises substrate layer, silicon dioxide layer, nanocrystalline diamond layer, graphene oxide layer, fluorinated graphene oxide portions, and linker layer.

KOVI K K, SCHIRMANN E, KHAN A

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Method for forming nucleation of diamond structure e.g. mesh-like structure, on non-diamond substrates, involves forming plasma in reaction chamber to cause carbon-containing gas to react and form diamond nuclei on surface of graphene layer.

TZENG Y, CHANG C