国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） C04（2）
C30（2） H01（2）
IPC小类 C01B（4）
IPC C23C016/32（4）
发明人
公开年 2021（3）
申请年 2021（4）
专利权人

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K