国家/地区 中国（4）
IPC部 C（4） H（3）
IPC大类 C23（4） C01（3） H01（3）
IPC小类 C23C（4） C01B（3） H01L（3）
H01J（2）
IPC C23C016/26（4）
发明人 NARKEVICIUTE I（3） VARADARAJAN B N（3） SHARMA K（2）
公开年 2021（3）
申请年 2021（2） 
专利权人 LAM RES CORP（3）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D