国家/地区 英国（2） 台湾（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C23C016/455（6）
发明人 DIXON S（2） GUINEY I（2）
公开年 2022（3）
申请年 2021（2）  2022（2） 
专利权人 PARAGRAF LTD（2）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing hexagonal boron nitride thin film useful for photoelectric device, light-emitting and light-receiving device, comprises forming hexagonal boron nitride thin film on graphene oxide layer by supplying e.g. boron-containing precursor.

KO K B, YOO B, HAN M, TRANVEITCUONG, HONG C

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G