国家/地区 中国（3）
IPC部 C（5）
IPC大类 C23（5） C01（3）
IPC小类 C23C（5） C01B（3）
IPC C23C016/458（5）
发明人
公开年 2021（3）
申请年 2020（5）
专利权人 BEIJING GRAP.（2）

Method for growing graphene wafer, involves depositing and growing graphene wafer on sapphire or metal substrate by vapor deposition, and arranging sheet above metal substrate, and sheet is parallel to plane of metal substrate.

WANG Y, TANG J, YAN R, DU Y

Chemical vapor deposition device for realizing continuous growth of graphene film on surface of graphene glass, comprises reaction unit for generating thin film on substrate by chemical vapor deposition reaction, and bearing panel.

GAO X, ZHENG K, LIU B, GU W

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Substrate used for preparing high-quality graphene, is made of iron-cobalt-nickel-copper alloy, and has thickness and surface roughness below preset value.

CAO N, LIU P, ZANG X, CAI K, WANG G, LI G