国家/地区 美国（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 BOL A A（2） LI X（2）
公开年
申请年
专利权人 INT BUSINESS.（2）

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Apparatus used to form graphene layer comprises reaction chamber containing support layer, heating element to heat the support layer, and control device configured to control the formation of graphene layer on surface of support layer.

BOUCHIAT V, CORAUX J, HAN Z

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I