国家/地区 日本（4）
IPC部 B（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人
公开年 2016（2）
申请年
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Producing graphene used as electronic materials and electrode materials, comprises contacting a carbon source substance with surface of flexible film-forming target, and applying a current to film-forming target and heating the target.

KOBAYASHI T, BANDO M, KIMURA N, SHIMIZU K, KADONO K, SUMINO K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S