国家/地区 日本（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人
公开年 2017（4）
申请年 2016（2） 
专利权人

Apparatus for continuous production of graphene, has rotatable substrate which is included with endless rotatable surface comprising material for accepting deposition of primary carbon layer prior to graphene growth.

ANDREASSEN JAKOBSEN M, DATSYUK V, JAKOBSEN M A

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H