国家/地区 美国（7）
IPC部 C（7） B（4） H（4）
IPC大类 C23（7） C01（6） B82（3）
H01（3）
IPC小类 C23C（7） C01B（6） B82Y（3）
H01J（3） H01L（2）
IPC C23C016/52（7）
发明人 NAGEL C J（3） BRODEUR C L（2）
公开年 2021（7）
申请年 2020（4）  2021（3） 
专利权人 QUANTUM ELEM.（3）

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Printing and growing of three-dimensional conducting structure of elementary metal for three-dimensional packaging, involves supplying solution into plasma, and reducing oxidation state of metal by reactive plasma species to form metal.

KOEHNE J E, MEYYAPPAN M, GANDHIRAMAN R

Performing quantum printing metal within nanoporous carbon powder involves adding nanoporous carbon powder into reactor assembly (RA) comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon powder.

NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets, reactor chamber containing nanoporous carbon material, first porous frit defining floor of reactor chamber, second porous frit defining ceiling of the reactor chamber.

NAGEL C J, BRODEUR C L

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S