国家/地区 美国（6） 中国（4） 韩国（4） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23C（8） C01B（7） B82Y（6）
H01L（6） B32B（4） B05D（2）
C23F（2） H01B（2）
IPC C23C016/56（8）
发明人
公开年 2012（5） 2013（3）
申请年 2011（8）
专利权人 EMPIRE TECHN.（2）

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Growing of graphene involves depositing graphene on glass substrate without catalyst, growing deposited graphene and evaporating metal catalyst on grown graphene.

CHOI J W, LEE C M, MUK L C, CHOI J U

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Device for pasting graphene film on substrate, has guide holes that are distributed at bottom portion and/or side wall portion of tank main portion.

SONG B, PENG P, JIN H

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X