国家/地区 世界知识产权组织（7）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7）
IPC C30B023/02（7）
发明人
公开年 2010（2） 2022（2）
申请年 2021（2） 
专利权人 UNIV SINGAPO.（2）

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Saturable absorber device for fiber laser, has saturable absorber material supported by optical fiber, which is provided with graphene, graphene-polymer composite, graphene oxide, graphene derivative or functionalized graphene.

LOH K P, BAO Q, TANG D Y, ZHANG H, KIAN L P, BAO O, LOH K, TANG D

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W