国家/地区 中国（4） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C30（7） C23（5） C01（2）
IPC小类 C30B（7）
IPC C30B025/02（7）
发明人
公开年 2017（4）
申请年 2016（7）
专利权人

Producing carbon structures containing graphene on surface of spatially shaped metal elements made of copper or its alloys, in chemically active gas working atmosphere containing inert shielding gas, by soaking materials in sealed retort.

BABUL T, OBUCHOWICZ Z, JONCZYK S, BARANOWSKI M, KONDEJ A

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Use of graphene as protective material for high-iron suspension wire, and preventing corrosion and oxidation of high-iron suspension wire.

SHI Y, BI H

Synthesizing reduced nuclei density monocrystalline graphene comprises electrochemical polishing rectangular thin copper sheet in phosphoric acid solution, annealing, introducing methane and hydrogen, and growing graphene.

SUN Z, LIU B

Growing of large-sized monocrystalline graphene on silicon carbide substrate used for microelectronic device, involves polishing silicon carbide substrate, introducing e.g. argon, placing probe on substrate and growing graphene on substrate.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X