国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4） C30B（4） B82Y（2）
IPC C30B025/16（4）
发明人
公开年
申请年
专利权人

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Preparing single-layer single crystal graphene comprises e.g. pretreatment of copper foil, substrate annealing, growing, and cooling down.

WEN Y, HUANG R, HUANG Z, LAI F

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O