国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人 XU X（4）
公开年 2016（3）
申请年 2016（4）
专利权人 UNIV PEKING（2） UNIV SHANDON.（2）

Preparing graphene on 6H-4H-silicon carbide metal composite substrate involves polishing 6H-4H-silicon carbide carbon surface, cleaning and cutting, placing in chemical vapor deposition furnace chamber and filling with argon.

CHEN X, CHENG X, MA Q, SUN L, XU X, YANG Z, YU F, ZHANG J, ZHAO X

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.

LIU K, YU D, WANG E, ZHANG Z, XU X

Preparation of monocrystalline copper foil used for growing two-dimensional large-sized graphene and boron nitride material, involves annealing metal element-doped polycrystalline copper foil.

LIU K, ZHANG Z, XU X