国家/地区 韩国（5）
IPC部 C（5）
IPC大类 C01（5） C30（5） B01（2）
H01（2）
IPC小类 C01B（5）
IPC C30B029/02（5）
发明人 MANCEVSKI V（2） VLADIMIR M（2）
公开年 2021（5）
申请年 2020（4） 
专利权人 UNIV HANYANG.（2） UNIVERSAL MA.（2）

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H