国家/地区 美国（7） 世界知识产权组织（5） 韩国（4） 日本（3） 中国（2）
IPC部 B（8）
IPC大类 C30（8） C01（7） B82（6）
B32（4） H01（4） B01（3）
C23（2）
IPC小类 C30B（8）
IPC C30B029/02（8）
发明人
公开年 2014（8）
申请年 2013（4）  2012（3） 
专利权人

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z