国家/地区 中国（16） 美国（8） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 澳大利亚（2） 加拿大（2） 韩国（2）
IPC部 C（22）
IPC大类 C30（22）
IPC小类 C30B（22）
IPC C30B029/02（22）
发明人 XU X（4） LIU K（3） ZHANG Z（3）
CHEN X（2） WANG E（2） YU D（2）
ZHANG X（2）
公开年 2016（22）
申请年 2016（11）  2015（9）  2014（2） 
专利权人 UNIV PEKING（4）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Preparation of single-crystal silicon carbide/graphene composite nanofiber used in e.g. nano optoelectronic device, involves heating silicon carbide nanofibers, vacuumizing with vacuum pump, and removing silicon from nanofibers.

CHEN J, DING L

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Preparing reduced graphene oxide-bismuth vanadate crystal with adsorption property comprises e.g. dissolving bismuth(iii) nitrate pentahydrate in dilute nitric acid and stirring, adding oleic acid, n-heptane and acetone, stirring and drying.

TAN G, XIA A, ZHAO C, REN H