国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B029/02（4）
发明人 LEI T（4）
公开年 2012（4）
申请年 2012（4） 
专利权人 UNIV XIDIAN（4）

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Preparing graphene based on copper film auxiliary annealing, useful for sealing gas and liquid, comprises cleaning silicon substrate, obtaining 3C-silicon carbide heteroepitaxial film, reacting, annealing, reconstructing and removing film.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Forming graphene involves putting cleaned silicon substrate into chemical vapor deposition system reaction chamber, heating, placing specific hetero-epitaxy film, depositing nickel film on the substrate by electronic beam, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y