国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7） C23（2）
IPC小类 C30B（7）
IPC C30B029/02（7）
发明人 CHI K（2） GUO W（2） WANG S（2）
公开年 2018（7）
申请年 2017（4）  2018（3） 
专利权人 UNIV HUAZHON.（2）

Preparing single crystal graphene sheet from papermaking black liquor used in transparent conductive materials, involves performing hydrothermal carbonization of papermaking black liquor, and adjusting reaction conditions.

WANG X, DING Z, WU P, LI F, SUN R

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on surface of copper foil.

WANG S, GUO W, CHI K

Preparing graphene micro-nanocrystal array involves introducing methane and oxygen on surface of copper foil by chemical vapor deposition method to prepare graphene micro-nanocrystal array where methane gas is used as graphene carbon source.

WANG S, GUO W, CHI K

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y