国家/地区 美国（3） 韩国（2）
IPC部 C（4）
IPC大类 H01（4） C01（3） C23（2）
IPC小类 H01J（4）
IPC H01J037/32（4）
发明人
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Composite material used for functionalizing carbon structures within plasma reactor, or liquid collection facility, comprises polymer, and graphene-containing material, where composite material has glass transition temperature that is 10% greater than glass transition temperature of polymer.

KC C B, BALDWIN J, HINES M, VANHEUSDEN K, ROGOJINA E, COOK D, LANNING B, ANZELMO B H, STOWELL M W