国家/地区 中国（5）
IPC部 H（5） C（4）
IPC大类 H01（5） C23（2）
IPC小类 H01J（5）
IPC H01J037/32（5）
发明人
公开年 2021（5）
申请年 2021（5）
专利权人

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Plasma etching anode plate used in semiconductor processing manufacturing process, has anode plate main portion provided multiple mounting positions, where through hole is individual detachably mounted on mounting position.

WANG Z, WU L, KE L

Graphene powder surface modified plasma reaction device comprises shell and rotating structure comprising roller and rotating motor, where rotating structure is set in vacuum cavity in shell.

HUANG L, JIAN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A