国家/地区 中国（6）
IPC部 H（7） G（2）
IPC大类 H01（7） G01（2）
IPC小类 H01L（7）
IPC H01L031/024（7）
发明人 LI X（3） CUI H（2） HU L（2）
LIU K（2） SUN Y（2） ZHU L（2）
公开年 2020（3） 2021（2）
申请年 2019（3）  2021（3） 
专利权人 UNIV XIAN JI.（2）

Wireless gamma or hard X-ray radiation detector for gamma or hard x-ray detector system, has bias circuit coupled to bulk semiconductor crystal through electrical contacts, and terahertz electromagnetic wave receiver is positioned to detect terahertz radiation emitted by bulk semiconductor crystal.

DAGHIGHIAN H M

Silicon carbide photovoltaic device comprises silicon carbide substrate and passivation layer comprising intrinsic silicon carbides.

WU Z, XU C, LI Z, JIN J, XIE J

Photo sensor shell used in detection and control, has upper and lower optical fiber ports that are jointed, and inner wall of front side of lower shell is welded with third reinforcing rib plate.

LUO H, LI S

Anti-interference UV light detector, has first electrode fixed on surface of absorbing body, metal shell formed with opening, and power supply unit whose positive and negative electrodes are connected to first and second electrodes.

LV H, GUO E, HE M, JIN K, YANG G

Aluminum gallium nitride-based graphene template UV detector, has aluminum gallium nitride/aluminum nitride super-lattice layer provided with graphene template radiating layer, and n-type electrode and p-type electrode arranged at two sides of pin structure layer.

ZHAO Y, SHEN S, YOU L, LI X, LI T

Gallium arsenide optical switch with heteroplane structure, has graphene layer that is provided between contact electrodes and gallium arsenide substrate, and gallium arsenide substrate whose upper surface is covered with passivation layer.

HU L, LI X, CUI H, ZHU L, LIU K, SUN Y

Bulk structure gallium arsenide photoconductive switch has gallium arsenide substrate, external electrode, light receiving hole and graphene layer, where cathode contact electrode is provided on lower surface of gallium arsenide substrate.

HU L, LI X, CUI H, ZHU L, LIU K, SUN Y